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机译:硅氮共掺杂高电阻率卤化物气相同质外延β-Ga_2O_3薄膜
US Naval, Res Lab, Power Elect Branch, Washington, DC 20375 USA;
US Naval, Res Lab, Power Elect Branch, Washington, DC 20375 USA;
US Naval, Res Lab, Elect Mat Branch, Washington, DC 20375 USA;
Amer Soc Engn Educ, Washington, DC 20036 USA;
Amer Soc Engn Educ, Washington, DC 20036 USA;
US Naval, Res Lab, Elect Mat Branch, Washington, DC 20375 USA;
US Naval, Res Lab, Power Elect Branch, Washington, DC 20375 USA;
US Naval, Res Lab, Power Elect Branch, Washington, DC 20375 USA;
US Naval, Res Lab, Power Elect Branch, Washington, DC 20375 USA;
Novel Crystal Technol, Sayama, Saitama 3501328, Japan;
Novel Crystal Technol, Sayama, Saitama 3501328, Japan;
Novel Crystal Technol, Sayama, Saitama 3501328, Japan;
Novel Crystal Technol, Sayama, Saitama 3501328, Japan;
Novel Crystal Technol, Sayama, Saitama 3501328, Japan;
Novel Crystal Technol, Sayama, Saitama 3501328, Japan;
机译:使用通过卤化物气相外延生长的Ga_2O_3同质外延膜制造的耗尽型垂直Ga_2O_3沟槽MOSFET
机译:卤化物气相外延生长β-Ga_2O_3层的同质外延
机译:通过金属机气相外延生长(201)同性境β-GA_2O_3薄膜的补偿
机译:Si-Doped
机译:通过热壁化学气相沉积法生长的同质外延4H-碳化硅(1120)薄膜的界面上的多型稳定性,微观结构演变和杂质
机译:可调带隙无针孔甲基铵卤化铅钙钛矿薄膜的低压蒸汽辅助溶液法
机译:卤化物气相外延在基底平面蓝宝石基板上生长的薄α-GA2O3薄膜的电性能,结构性能和深阱光谱
机译:在碳化硅晶片上同晶外生长单晶碳化硅膜的方法