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Emulating dynamic synaptic plasticity over broad timescales with memristive device

机译:使用忆阻器在广泛的时间范围内模拟动态突触可塑性

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摘要

Memristive devices have shown great potential in realizing artificial synapses efficiently for neuromorphic computing. However, emulation of various subtle forms of plasticity over broad timescales in a single device remains a challenge. In this paper, we designed a Ag/MgO/Pt memristive device exhibiting a volatile switching behavior and demonstrated various forms of synaptic plasticity from milliseconds to days in a single device. The volatile behaviors are owing to the formation and spontaneous rupture of silver nano-filaments with and without applying electrical stimuli. By manipulating the input voltage pulse strength, such as pulse amplitude, interval, and pulse number, several key features of biological synaptic plasticity including paired pulse facilitation, augmentation, post-tetanic potentiation, early long-term plasticity (LTP), and late-LTP were emulated. In addition, a reversible transition between short-term plasticity and LTP was also demonstrated. This work enables artificial synapses with rich plasticity in a single nano-device, providing a pathway to develop a large scale artificial neural network for brain inspired computing systems. Published by AIP Publishing.
机译:忆阻设备在有效实现神经形态计算的人工突触方面显示出巨大潜力。但是,在单个设备中在很宽的时间范围内模拟各种可塑性的微妙形式仍然是一个挑战。在本文中,我们设计了一种具有挥发性开关行为的Ag / MgO / Pt忆阻器件,并在单个器件中演示了从毫秒到几天的各种形式的突触可塑性。挥发性行为是由于在施加和不施加电刺激的情况下银纳米丝的形成和自发破裂。通过操纵输入电压脉冲强度(例如脉冲幅度,间隔和脉冲数),生物突触可塑性的几个关键特征包括成对的脉冲易化性,增强,强直性增强,早期长期可塑性(LTP)和晚期- LTP被仿真。此外,还表明了短期可塑性和LTP之间可逆的转变。这项工作可以在单个纳米设备中实现具有丰富可塑性的人工突触,从而为开发针对大脑灵感的计算系统的大规模人工神经网络提供了途径。由AIP Publishing发布。

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  • 来源
    《Applied Physics Letters》 |2018年第20期|203102.1-203102.5|共5页
  • 作者单位

    Singapore Univ Technol & Design, Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

    Singapore Univ Technol & Design, Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

    Singapore Univ Technol & Design, Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

    Singapore Univ Technol & Design, Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

    Singapore Univ Technol & Design, Engn Prod Dev, 8 Somapah Rd, Singapore 487372, Singapore;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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