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The switching properties of patterned synthetic ferrimagnetic structures

机译:图案化合成亚铁磁性结构的开关特性

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We investigated the switching properties of patterned submicrometer synthetic ferromagnetic (SF) Ni65Fe15Co20(t(1) nm)/Ru 0.8 nm/Ni65Fe15Co20(t(2) nm) tri-layers. By changing t(1) and t(2), the shape anisotropy field, H(k)(sh)proportional tot(1)-t(2), was changed from 36 to 18 Oe, and the effective material anisotropy field, H-k(eff),proportional toalpha=(t(1)+t(2)/t(1)-t(2), was changed from 28 to over 60 Oe. We found that a hard axis field, H-hd, is less effective at reducing the easy axis switching field, H-sw, as alpha is increased, with alpha=3.7 requiring twice the relative magnitude of H-hd for the same relative reduction in H-sw as a single magnetic layer. In addition, by repeating the basic SF tri-layer structure in circular elements, we demonstrated improved stability against thermal activation by a factor of 2 with no associated increase in H-sw. (C) 2004 American Institute of Physics.
机译:我们研究了图案化亚微米级合成铁磁(SF)Ni65Fe15Co20(t(1)nm)/ Ru 0.8 nm / Ni65Fe15Co20(t(2)nm)三层的开关性能。通过更改t(1)和t(2),形状各向异性场H(k)(sh)比例tot(1)-t(2)从36变为18 Oe,有效材料各向异性场Hk(eff)与α=(t(1)+ t(2)/ t(1)-t(2)成正比,从28变为60 Oe以上。我们发现硬轴场H-hd随着alpha的增加,在减小易轴切换磁场H-sw方面的效果较差,而alpha = 3.7时,相对于单个磁性层的H-sw相对减小,所需的H-hd相对大小是其两倍。 ,通过在圆形元件中重复基本的SF三层结构,我们证明了对热激活的稳定性提高了2倍,而H-sw却没有相关增加(C)2004美国物理研究所。

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