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Dielectric properties and space charge behavior in SiC ceramic capacitor

机译:SiC陶瓷电容器的介电性能和空间电荷行为

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Strong space charge response is observed in SiC ceramic capacitors at low frequencies up to 0.1 MHz. It leads to a dielectric constant of 2 910 000 at 100 Hz. The critical temperature is observed near 773 K. The losses decrease with increasing temperature. Strong frequency dependence of the dielectric properties is also detected. The SiC ceramic capacitor might be suitable as high-temperature by-pass capacitor in low voltage circuits. (C) 2004 American Institute of Physics.
机译:在高达0.1 MHz的低频下,在SiC陶瓷电容器中观察到了强烈的空间电荷响应。在100 Hz时的介电常数为291万。在773 K附近观察到临界温度。损耗随温度升高而降低。还检测到介电特性与频率的强相关性。 SiC陶瓷电容器可能适合用作低压电路中的高温旁路电容器。 (C)2004美国物理研究所。

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