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Antiferromagnetically coupled CoFeB/Ru/CoFeB trilayers

机译:反铁磁耦合的CoFeB / Ru / CoFeB三层

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This work reports on the magnetic interlayer coupling between two amorphous CoFeB layers, separated by a thin Ru spacer. We observe an antiferromagnetic coupling which oscillates as a function of the Ru thickness x, with the second antiferromagnetic maximum found for x=1.0-1.1 nm. We have studied the switching of a CoFeB/Ru/CoFeB trilayer for a Ru thickness of 1.1 nm and found that the coercivity depends on the net magnetic moment, i.e., the thickness difference of the two CoFeB layers. The antiferromagnetic coupling is almost independent of the annealing temperatures up to 300 degreesC while an annealing at 350 degreesC reduces the coupling and increases the coercivity, indicating the onset of crystallization. Used as a soft electrode in a magnetic tunnel junction, a high tunneling magnetoresistance of about 50%, a well-defined plateau and a rectangular switching behavior is achieved. (C) 2004 American Institute of Physics.
机译:这项工作报告了两个非晶CoFeB层之间的磁性层间耦合,该层之间被薄的Ru隔离层隔开。我们观察到反铁磁耦合随Ru厚度x的变化而振荡,第二反铁磁最大值出现在x = 1.0-1.1 nm处。我们已经研究了Ru厚度为1.1nm的CoFeB / Ru / CoFeB三层的转换,并且发现矫顽力取决于净磁矩,即两个CoFeB层的厚度差。反铁磁耦合几乎不依赖于高达300摄氏度的退火温度,而在350摄氏度的退火会降低耦合并提高矫顽力,表明开始结晶。用作磁性隧道结中的软电极,可实现约50%的高隧道磁阻,明确的平稳期和矩形开关行为。 (C)2004美国物理研究所。

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