Demonstration of a 256X256 middle-wavelength infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors

摘要

We report a demonstration of an infrared focal plane array based on InGaAs/InGaP quantum dot infrared photodetectors. The middle-wavelength infrared quantum-dot infrared photodetector (QDIP) structure was grown via low-pressure metal organic chemical vapor deposition. A detectivity of 3.6 x 10~(10) cmHz~(1/2)/W was achieved at T=95 K and a bias of -1.4 V. The background limited temperature of our QDIP was 140 K with a 45° field of view. A 256 x 256 detector array was fabricated with dry etching, and hybridized to a Litton readout chip by indium bumps. Thermal imaging was achieved at temperatures up to 120 K. At T = 77 K, the noise equivalent temperature difference was measured as 0.509 K with a 300 K background and f/2.3 optics.