Mn-implanted dilute magnetic semiconductor lnP:Mn

摘要

Unintentionally doped bulk InP was prepared by the liquid encapsulated Czochralski method and subsequently implanted with various doses of Mn~+. The properties of Mn~+-implanted InP:Mn were investigated by various measurements. The results of energy dispersive x-ray peaks displayed injected concentrations of Mn of 0.8% and 8.8%, respectively. The results of photoluminescence (PL) measurement showed that optical broad transitions related to Mn appeared near 1.089, 1.144, and 1.185 eV in samples with various doses of Mn~+. It was confirmed that the photoluminescence peaks near 1.089, 1.144, and 1.185 eV were Mn-correlated PL bands by the implantation of Mn. Ferromagnetic hysteresis loops measured at 10 K were observed and the temperature-dependent magnetization showed ferromagnetic behavior around 90 K, which almost agreed with the theoretical prediction (T_c～70 K).