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Photoelectronic transport imaging of individual semiconducting carbon nanotubes

机译:单个半导体碳纳米管的光电传输成像

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Photoconductivity in individual semiconducting single-wall carbon nanotubes was investigated using a confocal scanning optical microscope. The magnitude of the photocurrent was found to increase linearly with the laser intensity, and to be maximum for parallel orientation between the light polarization and the tube axis. Larger currents were obtained upon illuminating the tubes at 514.5 nm in comparison to those at 647.1 nm, consistent with the semiconducting tubes having a resonant absorption energy at the former wavelength. Moreover, the determination of the photoresponse as a function of position along single nanotubes has proven to be a useful tool to monitor local electronic structure effects.
机译:使用共聚焦扫描光学显微镜研究了单个半导体单壁碳纳米管中的光电导性。发现光电流的大小随激光强度线性增加,并且在光偏振和管轴之间的平行方向上最大。与在647.1 nm处照射管相比,在514.5 nm处照射管获得了更大的电流,这与在前一个波长处具有共振吸收能量的半导体管一致。而且,已证明根据沿着单个纳米管的位置来确定光响应是监测局部电子结构效应的有用工具。

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