High brightness GaInAs/(Al)GaAs quantum-dot tapered lasers at 980 nm with high wavelength stability

摘要

High brightness (2 W with M~(2)=3.4) is demonstrated at 980 nm using a gain-guided tapered GaInAs/(Al)GaAs quantum-dot laser. A remarkable low temperature shift (0.09 nm/K) of the emission wavelength is observed. Moreover, at 20℃, the emission wavelength is quasiconstant as a function of the injected current.