Electroluminescence from a single pyramidal quantum dot in a light-emitting diode

摘要

We report on the fabrication of a quantum-dot light-emitting diode (QD-LED), exhibiting electroluminescence from a single, self-formed QD obtained by epitaxial growth on pyramidal recess patterns. Moreover, selective carrier injection through a submicron metal contact and a 20-nm-wide self-formed low potential vertical channel connected to the QD active area is demonstrated, resulting in enhanced injection efficiency. The developed fabrication process offers full flexibility to control the number and position of the emitters down to a single QD in a micron-size compact LED. This makes this system an ideal candidate for efficient, electrically driven single-photon sources for quantum information applications.