Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon

摘要

We compare the optical properties, chemical composition, and crystallinity of silicon microstructures formed in the presence of SF_(6) by femtosecond laser irradiation and by nanosecond laser irradiation. In spite of very different morphology and crystallinity, the optical properties and chemical composition of the two types of microstructures are very similar. The structures formed with femtosecond (fs) pulses are covered with a disordered nanocrystalline surface layer less than 1 μm thick, while those formed with nanosecond (ns) pulses have very little disorder. Both ns-laser-formed and fs-laser-formed structures absorb near-infrared (1.1-2.5 μm) radiation strongly and have roughly 0.5% sulfur impurities.