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Texture of NiGe on Ge(001) and its evolution with formation temperature

机译:Ge(001)上NiGe的织构及其随形成温度的演变

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Texture of NiGe on Ge(001) and its evolution with formation temperature have been investigated. Pole figure investigation showed that NiGe formed by rapid thermal annealing of Ni(35 nm)/Ge(001) largely consists of epitaxial grains with orientation relationships: NiGe(111) x [011]//Ge(001)[110], NiGe(020)[001]//Ge(001)[100], NiGe(201)[102]//Ge(001)[110], NiGe (211)[011]//Ge(001)[110], NiGe(112)[201]//Ge(001)[110], and NiGe(210)[001]//Ge(001)[100]. For NiGe formed at 400℃, NiGe(111)[011]//Ge(001)[110], NiGe(020)[001]//Ge(001) X[100], NiGe(201)[102]//Ge(001)[110], and NiGe(211)[011]//Ge(001)[110] were found to be the preferred orientations, while NiGe formed at 600℃ was dominated by NiGe grains with NiGe(111)[011]//Ge(001)[110] orientation. The increasing dominance of the grains with NiGe(111)[011]//Ge(001)[110] orientation is attributed to the minimum lattice mismatch with this orientation.
机译:研究了Ge(001)上NiGe的织构及其随形成温度的演变。极图研究表明,通过Ni(35 nm)/ Ge(001)的快速热退火形成的NiGe主要由取向关系为NiGe(111)x [011] // Ge(001)[110],NiGe的外延晶粒组成(020)[001] // Ge(001)[100],NiGe(201)[102] // Ge(001)[110],NiGe(211)[011] // Ge(001)[110], NiGe(112)[201] // Ge(001)[110]和NiGe(210)[001] // Ge(001)[100]。对于在400℃下形成的NiGe,NiGe(111)[011] // Ge(001)[110],NiGe(020)[001] // Ge(001)X [100],NiGe(201)[102] / / Ge(001)[110]和NiGe(211)[011] // Ge(001)[110]是优选的取向,而在600℃时形成的NiGe以具有NiGe(111)的NiGe晶粒为主[011] // Ge(001)[110]方向。 NiGe(111)[011] // Ge(001)[110]取向的晶粒的支配性增加是由于该取向的最小晶格失配。

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