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Growth and field-emission property of tungsten oxide nanotip arrays

机译:氧化钨纳米尖端阵列的生长和场发射特性

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摘要

Large-area, quasialigned nanotips of tungsten oxide have been grown by a two-step high-temperature, catalyst-free, physical evaporation deposition process. The tungsten oxide nanotips are single crystalline with growth direction of [010]. The tungsten oxide nanotips exhibit excellent field-emission properties with a low threshold field (for an emission current density of 10 mA/cm~2) ~4.37 MV/m and uniform emission from the entire arrays, as well as high time stability. These results make tungsten oxide nanotip arrays a competitive candidate for field-emission displays.
机译:氧化钨的大面积准取向纳米尖端已通过两步高温,无催化剂的物理蒸发沉积工艺生长。氧化钨纳米尖端是单晶,具有[010]的生长方向。氧化钨纳米尖端具有优异的场发射性能,阈值场低(发射电流密度为10 mA / cm〜2)〜4.37 MV / m,整个阵列发射均匀,时间稳定性高。这些结果使氧化钨纳米尖端阵列成为场发射显示器的竞争候选者。

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