Fabrication of C_(60) field-effect transistors with polyimide and Ba_(0.4)Sr_(0.6)Ti_(0.96)O_3 gate insulators

摘要

A flexible C_(60) field-effect transistor (FET) device has been fabricated with a polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally off FET properties are observed in this FET device. The field-effect mobility, μ, is estimated to be ～10~(-2) cm~2 V~(-1) s~(-1) at 300 K. Furthermore, the C_(60) FET has been fabricated with a high-dielectric Ba_(0.4)Sr_(0.6)Ti_(0.96)O_3 (BST) gate insulator, showing n-channel properties; the μ value is estimated to be ～10~(-4) cm~2 V~(-1) s~(-1) at 300 K. The FET device operates at very low gate voltage, V_G, and low drain-source voltage, V_(DS). Thus these C_(60) FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.