Simple approach to β-SiC nanowires: Synthesis, optical, and electrical properties

摘要

High-quality β-SiC nanowires were synthesized on activated carbon fiber via a thermal evaporation method without the use of metal catalyst. Their structure and chemical composition were studied by Raman spectroscopy and high-resolution electron microscopy. Field effect transistors were fabricated to investigate the β-SiC nanowire electrical behavior possessing n-channel characterization. The carrier mobility of the devices was 15.9 cm~2/V s when the V_(ds) is 0.01 V. This result contributes to the development of efficient nanodevices based on β-SiC nanowires, as well as nanocomposites.