Gain and lifetime of GalnNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56 μm

摘要

The continuous-wave (cw) operation of GalnNAsSb lasers at 1560 nm is reported. Light-current measurements were made before and after a 100 h cw burn in at 20 ℃, during which a 3 X 890 μm~2 device with 72 mA initial threshold current and 14 mW maximum output power experienced a 15% drop in peak output power. These preliminary lifetime results provide insight into the reliability of GalnNAsSb active regions and reinforce the promise of this material for C-band devices. High-resolution modal gain spectra were extracted from the amplified spontaneous emission spectra acquired after the burn in, providing reliable values for the internal loss, transparency current, and differential gain.