Improved n-type organic transistors by introducing organic heterojunction buffer layer under source/drain electrodes

摘要

N-type organic thin-film transistors (OTFTs) employing hexadecafluorophthalocyaninatocopper (F_(16)CuPc) as active layer and p-type copper phthalocyanine (CuPc) as buffer layer are demonstrated. The highest field-effect mobility is 7.6 X 10~(-2) cm~2/V s. The improved performance was attributed to the decrease of contact resistance due to the introduction of highly conductive F_(16)GuPc/CuPc organic heterojunction. Therefore, current method provides an effective path to improve the performance of OTFTs.