Resonant tunneling effect in metal-semiconductor-metal ultraviolet detectors grown with AlGaN/GaN multi-quantum-well interlayer

摘要

Ⅰ-Ⅴ and C-V curves of metal-semiconductor-metal ultraviolet detector grown with AlGaN/GaN multi-quantum-well (MQW) interlayer are found to oscillate with applied bias voltage. A simple model is proposed to explain the oscillation phenomena of both curves. Resonant tunneling of polarization induced charges through the barriers of the nitride based MQW structure terminated with back-to-back configuration Schoktty contacts may play a key role in the oscillating phenomena.