Electrical characterization of GaAs metal bonded to Si

摘要

Wafer bonding has traditionally focused on producing either insulating or nonlinear heterostructure interfaces; low-resistance Ohmic interfaces would offer the advantage of more efficient current delivery. In this study, doped GaAs was bonded to doped Si using indium and palladium interlayers. During heating above the lower melting point metal indium, a solid alloy is formed bonding the GaAs and Si together, this process is typically referred to as isothermal solidification. This method universally created Ohmic bond interfaces for all doping types. A metric was devised to measure the bond resistivity revealing a resistivity of 1.03 X 10~(-5) Ω cm~2 for n-GaAs bonded to p-Si.