Superior electrical properties of crystalline Er_2O_3 films epitaxially grown on Si substrates

摘要

Crystalline Er_2O_3 thin films were epitaxially grown on Si (001) substrates. The dielectric constant of the film with an equivalent oxide thickness of 2.0 nm is 14.4. The leakage current density as small as 1.6 X 10~(-4)A/cm~2 at a reversed bias voltage of -1 V has been measured. Atomically sharp Er_2O_3/Si interface, superior electrical properties, and good time stability of the Er_2O_3 thin film indicate that crystalline Er_2O_3 thin film can be an ideal candidate of future electronic devices.