Field-effect transistors with thin films of perylene on SiO_2 and polyimide gate insulators

摘要

Field-effect transistor (FET) devices have been fabricated with thin films of perylene on SiO_2 and polyimide gate insulators, and p-channel FET properties have been found in both FET devices. The perylene FET devices with SiO_2 and polyimide gate insulators exhibited field-effect mobility, μ, values of 7.0 X 10~(-3) and 3.7 X 10~(-4) cm~2 V~(-1) s~(-1), respectively, at 300 K under vacuum of 10~(-6) Torr. These FET devices were found to operate under atmospheric condition after exposure to air. The μ value increased with increasing temperature from 160 to 280 K, showing a hopping carrier transport.