Vertical stacks of shape-engineered InAs/InAlGaAs quantum dot and its influences on the lasing characteristics

摘要

The formation characteristics on the vertical stacks of shape-engineered InAs/lnAIGaAs quantum dots (QDs), which were formed by the alternate growth method (AGQDs), were studied in terms of the modulation in strain field and phase separation. The threshold current of the broad-area laser diodes (LDs) with five stacks of the AGQDs (AGQD-LDs) was 4.5 times smaller than that of the LDs with seven stacks of the conventionally grown QDs (CQD-LDs). The slope efficiency for the AGQD-LDs was 0.16 W/A, which was higher than that of the CQD-LDs of 0.9 W/A. These results can be attributed to better confinement of the electron wave function in QDs.