首页> 外文期刊>Applied Physics Letters >Photoluminescence characterization of Zn_(1-x)Mg_xO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy
【24h】

Photoluminescence characterization of Zn_(1-x)Mg_xO epitaxial thin films grown on ZnO by radical source molecular beam epitaxy

机译:自由基源分子束外延技术在ZnO上生长的Zn_(1-x)Mg_xO外延薄膜的光致发光表征

获取原文
获取原文并翻译 | 示例
           

摘要

The authors report that high-quality Zn_(1-x)Mg_xO alloys are very brilliant light emitters, even more brilliant than ZnO, particularly in the high-temperature region; both the emission bandwidth and the oscillator strength of the photoluminescence from Zn_(1-x)Mg_xO alloys increase remarkably with increasing Mg composition ratio x. The authors have revealed that the increase in the oscillator strength is mainly due to the increase in the activation energy required for the nonradiative recombination processes. Therefore, it is suggested that the localization of excitons, because of the compositional fluctuation, takes place in Zn_(1-x)Mg_xO alloys and that the degree of the localization increases with increasing x.
机译:作者报告说,高质量的Zn_(1-x)Mg_xO合金是非常明亮的发光体,甚至比ZnO更明亮,特别是在高温区域。 Zn_(1-x)Mg_xO合金的光致发光发射带宽和振荡强度都随着Mg组成比x的增加而显着增加。作者已经揭示出振荡器强度的增加主要是由于非辐射复合过程所需的活化能的增加。因此,建议在Zn_(1-x)Mg_xO合金中,由于成分波动而发生激子的局域化,并且局域化程度随x的增加而增加。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号