GaSb homojunctions for far-infrared (terahertz) detection

摘要

A GaSb based homojunction interfacial work function internal photoemission far-infrared (>30 μm) detector is presented. Metal-organic vapor phase epitaxy grown p-GaSb/GaSb samples show 9.7 A/W peak responsivity and a peak detectivity of 5.7 X 10~(11) Jones with effective quantum efficiency of 33% at 36 μM and 4.9 K. The detector exhibits a 97 μm (～3 THz) free carrier response threshold wavelength. Results indicate that p-GaSb homojunction internal work function internal photoemission detectors are promising candidates to be a competitor for terahertz applications.