Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure

摘要

A buried grating structure with a selectively grown absorptive InGaAsP layer was fabricated and characterized by scanning electron microscopy and photoluminescence. The InP corrugation was etched by introducing a SiO_2 mask that was more stable than a conventional photoresist mask during the etching process. Moreover, the corrugation was efficaciously preserved during the selective growth of the absorptive layer with the SiO_2 mask. Though this absorptive layer was only selectively grown on the concave region of the corrugation, it has a high intensity around the peak wavelength in comparison with that of InGaAlAs multiple quantum well, which was grown on the buried grating structure.