High power 2.4 μm heavily strained type-Ⅰ quantum well GaSb-based diode lasers with more than 1 W of continuous wave output power and a maximum power-conversion efficiency of 17.5%

摘要

The authors demonstrate a double quantum well GaSb-based diode laser operating at 2.4 μm with a room-temperature cw output power of 1050 mW and a maximum power-conversion efficiency of 17.5%. Laser differential gain with respect to current increases by a factor of 2 and laser threshold current is nearly halved when the compressive strain in the quantum wells is increased from 1.2% to 1.6%. This improvement is due to substantially improved hole confinement in the heavily compressively strained active region.