机译:等离子体与化学合成的银纳米颗粒偶联,增强了InGaN量子阱的发光
Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 St. Mary's Street, Boston, Massachusetts 02215, USA;
Department of Chemistry and Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, South Carolina 29634, USA;
Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 St. Mary's Street, Boston, Massachusetts 02215, USA;
Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 St. Mary's Street, Boston, Massachusetts 02215, USA;
Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 St. Mary's Street, Boston, Massachusetts 02215, USA;
Department of Chemistry and Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, South Carolina 29634, USA;
Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 St. Mary's Street, Boston, Massachusetts 02215, USA;
Department of Electrical and Computer Engineering and Photonics Center, Boston University, 8 St. Mary's Street, Boston, Massachusetts 02215, USA;
机译:InGaN / GaN量子阱中的量子限制斯塔克效应对其与表面等离激元耦合以增强发光的影响
机译:通过耦合到二维银阵列中的表面等离激元,增强了来自InGaN / GaN多量子阱的绿色发射。
机译:通过耦合到金纳米粒子等离子体激元来增强InGaN / GaN多量子阱纳米棒的发射
机译:量子狭窄的效果在Ingan / GaN量子中的作用阱在其与光发射增强表面等离子体的耦合过程中
机译:等离子增强拉曼光谱和金和银纳米粒子的荧光光谱。
机译:金属纳米颗粒的形状和尺寸对氧化铝诱导的激子-等离子体耦合和量子点发射增强的影响
机译:使用银和铂纳米粒子的IngaN / GaN发光二极管的局部表面等离子体增强近紫外线