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首页> 外文期刊>Applied Physicsletters >Improvement of structural, electronic, and magnetic properties of Co_2MnSi thin films by He~+ irradiation
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Improvement of structural, electronic, and magnetic properties of Co_2MnSi thin films by He~+ irradiation

机译：He〜+辐照改善Co_2MnSi薄膜的结构，电子和磁性

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摘要

The influence of 30 keV He~+ ion irradiation on structural, electronic, and magnetic properties of Co_2MnSi thin films with a partial 52 order was investigated. It was found that room temperature irradiation with light ions can improve the local chemical order. This provokes changes of the electronic structure and element-specific magnetization toward the bulk properties of a well-ordered Co_2MnSi Heusler compound.
机译：研究了30 keV He〜+离子辐照对部分52阶Co_2MnSi薄膜的结构，电子和磁性的影响。发现在室温下用光离子辐照可以改善局部化学顺序。这引起了电子结构和特定元素的磁化向有序Co_2MnSi Heusler化合物的整体性质的变化。

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  • 来源
    《Applied Physicsletters》 |2009年第15期|159-161|共3页
  • 作者

    O. Gaier; J. Hamrle; B. Hillebrands; M. Kallmayer; P. Poersch; G. Schoenhense; H. J. Elmers; J. Fassbender; A. Gloskovskii; C. A. Jenkins; C. Felser; E. Ikenaga; Y. Sakuraba; S. Tsunegi; M. Oogane; Y. Ando;

  • 作者单位

    Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universitaet Kaiserslautern,Erwin-Schroedinger-Straβe 56, D-67663 Kaiserslautern, Germany;

    Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universitaet Kaiserslautern,Erwin-Schroedinger-Straβe 56, D-67663 Kaiserslautern, Germany;

    Fachbereich Physik and Forschungszentrum OPTIMAS, Technische Universitaet Kaiserslautern,Erwin-Schroedinger-Straβe 56, D-67663 Kaiserslautern, Germany;

    Institut fuer Physik, Johannes Gutenberg-Universitaet, D-55099 Mainz, Germany;

    Institut fuer Physik, Johannes Gutenberg-Universitaet, D-55099 Mainz, Germany;

    Institut fuer Physik, Johannes Gutenberg-Universitaet, D-55099 Mainz, Germany;

    Institut fuer Physik, Johannes Gutenberg-Universitaet, D-55099 Mainz, Germany;

    Forschungszentrum Dresden-Rossendorf e. V., Institut fuer lonenstrahlphysik und Materialforschung, Bautzner Landstrasse 128, D-01328 Dresden, Germany;

    Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-Universitaet, D-55099 Mainz, Germany;

    Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-Universitaet, D-55099 Mainz, Germany;

    Institute of Inorganic and Analytical Chemistry, Johannes Gutenberg-Universitaet, D-55099 Mainz, Germany;

    SPring-8 JASRI, Hyogo 679-5198, Japan;

    Magnetic Materials Laboratory, Institute for Materials Research (IMR), Tohoku University, Katahira 2-1-1, Sendai 980-8577, Japan;

    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Sendai 980-8579. Japan;

    Department of Applied Physics, Graduate School of Engineering, Tohoku University, Aoba-yama 6-6-05, Sendai 980-8579. Japan;

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