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Spontaneous formation of vertically anticorrelated epitaxial islands on ultrathin substrates

机译:垂直反相关外延岛在超薄基底上的自发形成

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摘要

Exploration of self-assembled epitaxial islands on ultrathin substrates opens a way for fabricating mechanoelectric heterostructures, while the effect of substrate thickness remains unclear. By using phase field simulations, we demonstrate spontaneous formation of a vertically anticorrelated quantum dot growth on the top and bottom surfaces of an ultrathin substrate. The mechanism of this vertical anticorrelation is due to the overlapping effect of the fringe elastic field modulated by the substrate thickness. Good agreements with the pattern of epitaxial islands on nanowire and nanomembrane are observed. The obtained result provides a guideline for tailoring the ordering of heteroepitaxial island growth.
机译:对超薄基板上自组装外延岛的探索为制造机电异质结构开辟了一条途径,而基板厚度的影响仍不清楚。通过使用相场模拟,我们证明了超薄基板顶部和底部表面上垂直反相关量子点生长的自发形成。这种垂直反相关的机制是由于由基底厚度调制的边缘弹性场的重叠效应。观察到与纳米线和纳米膜上的外延岛图案良好的一致性。获得的结果为调整异质外延岛生长的顺序提供了指导。

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  • 来源
    《Applied Physics Letters》 |2010年第26期|p.261911.1-261911.3|共3页
  • 作者

    Y. Ni; L. H. He;

  • 作者单位

    Department of Modern Mechanics, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

    Department of Modern Mechanics, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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