机译:通过原位金属沉积控制石墨烯的电传输性质
School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083,People's Republic of China Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, USA;
Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, USA Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications,Xiamen University, Xiamen 361005, People's Republic of China;
Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, USA Department of Physics, Fujian Key Laboratory of Semiconductor Materials and Applications,Xiamen University, Xiamen 361005, People's Republic of China;
Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, USA;
School of Mechanical Engineering, University of Science and Technology Beijing, Beijing 100083,People's Republic of China;
Department of Mechanical Engineering and the Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712, USA;
机译:使用金属-有机气相沉积/原子层沉积混合系统原位制造的包括Al2O3栅氧化物和AlN钝化层的GaAs金属-氧化物-半导体结构的电性能
机译:通过控制聚合物残留物的影响来增强通过化学气相沉积法生长的石墨烯的电性能
机译:低压化学气相沉积法在多晶PtRh_(20)合金箔上生长的高质量石墨烯及其电传输性能
机译:石墨烯上基于臭氧的原子层沉积的原位电学研究
机译:欧姆金属和氧化物沉积对碳化硅衬底上多层外延石墨烯的结构和电性能的影响。
机译:控制石墨烯中的缺陷以优化石墨烯纳米器件的电性能
机译:使用金属有机气相沉积/原子层沉积混合系统原位制造的包含al2O3栅极氧化物和alN钝化层的Gaas金属氧化物半导体结构的电特性