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Enhanced retention characteristic of NiSi_2/SiN_x compound nanocrystal memory

机译：NiSi_2 / SiN_x复合纳米晶体存储器的增强的保留特性

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摘要

The NiSi_2/SiN_x compound nanocrystals (CNCs) were fabricated to integrate the compound tunnel barrier into nanocrystal memory, with the inclusion of nitride traps. The analysis of high resolution transmission electron microscopy and x-ray photoelectron spectroscopy reveal that the nanocrystal is mainly composed of NiSi_2 and silicon nitride with small size of 4-5 nm and high density of ～1 × 10~(12) cm~(-2). The charge storage characteristics of the memory capacitor based on NiSi_2/SiN_x CNCs were investigated by capacitance-voltage measurement and the enhanced retention characteristics, which remain 71.7% (～1.9 V) in 10~4 s, are clarified to be due to the compound tunnel barrier and traps in nitride.
机译：制作了NiSi_2 / SiN_x复合纳米晶体（CNC），以将化合物隧道势垒集成到纳米晶体存储器中，并包含氮化物陷阱。高分辨率透射电子显微镜和X射线光电子能谱分析表明，该纳米晶体主要由NiSi_2和氮化硅组成，具有4-5 nm的小尺寸和〜1×10〜（12）cm〜（-）的高密度。 2）。通过电容电压测量研究了基于NiSi_2 / SiN_x CNC的存储电容器的电荷存储特性，并在10〜4 s内保持了71.7％（〜1.9 V）的增强保留特性，这归因于该化合物。隧道势垒和氮化物中的陷阱。

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  • 来源
    《Applied Physicsletters》 |2010年第26期|P.262107.1-262107.3|共3页
  • 作者

    Jin Lu; Ting-Chang Chang; Yu-Ting Chen; Jheng-Jie Huang; Po-Chun Yang; Shih-Ching Chen; Hui-Chun Huang; Der-Shin Gan; New-Jin Ho; Yi Shi; Ann-Kuo Chu;

  • 作者单位

    Department of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    rnDepartment of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Physics, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    rnDepartment of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, People's Republic of China;

    rnDepartment of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

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