首页> 外文期刊>Applied Physicsletters >Polarization reversal behavior in the Pt/Pb(Zr,Ti)O_3/Pt and Pt/Al_2O_3/Pb(Zr,Ti)O_3/Pt capacitors for different reversal directions
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Polarization reversal behavior in the Pt/Pb(Zr,Ti)O_3/Pt and Pt/Al_2O_3/Pb(Zr,Ti)O_3/Pt capacitors for different reversal directions

机译:Pt / Pb(Zr,Ti)O_3 / Pt和Pt / Al_2O_3 / Pb(Zr,Ti)O_3 / Pt电容器在不同反转方向上的极化反转行为

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摘要

The polarization reversal behavior of Pt/Pb(Zr,Ti)O_3/Pt and Pt/Al_2O_3/Pb(Zr,Ti)O_3/Pt capacitors was examined according to the reversal direction using transient switching current measurements. The changes in switching resistance according to the polarization reversal direction suggests that during reversal from the upward to downward polarization, nucleation of a reversed domain occurs at the top interface, whereas nucleation occurs at the bottom interface in the opposite case. The extremely high activation energy for the nucleation of a reversed domain can be reduced considerably by electron injection from the by-electrode but not by hole injection.
机译:使用瞬态开关电流测量,根据反转方向检查了Pt / Pb(Zr,Ti)O_3 / Pt和Pt / Al_2O_3 / Pb(Zr,Ti)O_3 / Pt电容器的极化反转行为。开关电阻根据极化反转方向的变化表明,在从上极化反转到下极化的过程中,反转畴的成核在顶部界面处发生,而成核则在底部界面处发生相反的情况。通过从副电极注入电子而不是通过空穴注入,可以大大降低用于反向畴成核的极高活化能。

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  • 来源
    《Applied Physicsletters》 |2010年第21期|P.212902.1-212902.3|共3页
  • 作者单位

    Department of Materials Science and Engineering, WCU Hybrid Materials Program, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea;

    Department of Materials Science and Engineering, WCU Hybrid Materials Program, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea;

    Department of Materials Science and Engineering, WCU Hybrid Materials Program, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea;

    Department of Microelectronics, ASIC and System State Key Laboratory, Fudan University, Shanghai 200433, People's Republic of China;

    rnDepartment of Materials Science and Engineering, WCU Hybrid Materials Program, Inter-University Semiconductor Research Center, Seoul National University, Seoul 151-744, Republic of Korea;

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