机译:采用AlO_x钝化层改善Al-Sn-Zn-In-O薄膜晶体管的光子偏压稳定性
Oxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea Department of Information Display, Kyung Hee University, Seoul 130-701, Republic of Korea;
Oxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea;
rnOxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea;
rnOxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea;
rnOxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea;
rnDepartment of Information Display, Kyung Hee University, Seoul 130-701, Republic of Korea;
Oxide Electronics Research Team, Electronics and Telecommunications Research Institute, Daejeon 305-700, Republic of Korea Department of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea;
机译:具有SiO_x钝化层的非晶InGaZnO_4薄膜晶体管的偏置稳定性的提高
机译:具有SiOx钝化层的非晶InGaZnO4薄膜晶体管的偏置稳定性的改善
机译:使用SU-8钝化层改善p型SnO薄膜晶体管的长期耐久性和偏置应力稳定性
机译:具有SiNx / HfO2钝化层的P型SnO薄膜晶体管的栅极偏置和电流应力稳定性的增强
机译:关于偏压应力施加对非晶铟 - 镓 - 锌 - 氧化锌薄膜晶体管的可逆效应
机译:钝化层对非晶InGaZnO薄膜晶体管正栅极偏置-应力稳定性的影响
机译:钝化层对钼二硫薄膜晶体管的正偏置温度不稳定性的影响