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Surface transfer hole doping of epitaxial graphene using MoO_3 thin film

机译：MoO_3薄膜对外延石墨烯的表面转移孔掺杂

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摘要

Synchrotron-based in situ photoelectron spectroscopy investigations demonstrate effective surface transfer p-type doping of epitaxial graphene (EG) thermally grown on 4H-SiC(0001) via the deposition of MoO_3 thin film on top. The large work function difference between EG and MoO_3 facilitates electron transfer from EG to the MoO_3 thin film. This leads to hole accumulation in the EG layer with an areal hole density of about 1.0 × 10~(13) cm~(-2), and places the Fermi level 0.38 eV below the graphene Dirac point.
机译：基于同步加速器的原位光电子光谱研究表明，通过在顶部沉积MoO_3薄膜，在4H-SiC（0001）上热生长的外延石墨烯（EG）进行了有效的表面转移p型掺杂。 EG和MoO_3之间的较大功函数差异有助于电子从EG转移到MoO_3薄膜。这导致在EG层中的空穴积累，其表面积空穴密度约为1.0×10〜（13）cm〜（-2），并使费米能级比石墨烯Dirac点低0.38 eV。

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  • 来源
    《Applied Physicsletters》 |2010年第21期|P.213104.1-213104.3|共3页
  • 作者

    Zhenyu Chen; Iman Santoso; Rui Wang; Lan Fei Xie; Hong Ying Mao; Han Huang; Yu Zhan Wang; Xing Yu Gao; Zhi Kuan Chen; Dongge Ma; Andrew Thye Shen Wee; Wei Chen;

  • 作者单位

    Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People's Republic of China;

    Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 Jurusan Fisika, Universitas Gadjah Mada, BLS 21 Yogyakarta, Indonesia;

    rnDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542;

    rnDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542;

    rnDepartment of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543;

    rnDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542;

    rnDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542;

    rnDepartment of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543;

    rnInstitute of Materials Research and Engineering, 3 Research Link, Singapore 117602;

    rnState Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, People's Republic of China;

    Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542;

    rnDepartment of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543 Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542;

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