机译:GaN纳米线网络中的负差分电阻
National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;
Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;
National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;
National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;
National Research and Development Institute in Microtechnology, Str. Erou Iancu Nicolae 32B,077190 Bucharest, Romania;
Department of Physics, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania;
Department of Electronics, Polytechnics University of Bucharest, 1-3 Iuliu Maniu Av.,061071 Bucharest, Romania;
Department of Chemistry, University of Crete, Vassilika Vouton, Heraklion, Crete, Greece;
Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;
Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;
Microelectronics Research Group, IESL, FORTH, P. O. Box 1385, 71110 Heraklion-Crete, Greece;
机译:GaN纳米线网络中的负差分电阻
机译:聚焦电子束沉积铂触点的隔离GaN纳米线中的负差分电阻
机译:聚焦电子束沉积铂触点的隔离GaN纳米线中的负差分电阻
机译:基于硅纳米线结构的具有超高峰谷电流比的负差分电阻器件
机译:电解质负微分电阻,纳米孔中的纳米粒子动力学以及纳米电极处的纳米气泡生成。
机译:桥接两个金属电极的ZnO纳米线的负差分电阻
机译:具有150 ka /平方公分电流和电流的低电阻GaN隧道同质结 可重复的负差分电阻