机译:ZnO纳米棒和Ti缓冲层的结构和电性能
Department of Materials Science and Engineering, Pohang University of Science and Technology,Pohang 790-784, Republic of Korea;
Department of Physics and Institute of Fusion Science, Chonbuk National University, Jeonju 561-756,Republic of Korea;
Department of Physics and Institute of Fusion Science, Chonbuk National University, Jeonju 561-756,Republic of Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology,Pohang 790-784, Republic of Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology,Pohang 790-784, Republic of Korea;
Division of Science Education, Institute of Fusion Science, and Institute of Science Education,Chonbuk National University, Jeonju 561-756, Republic of Korea;
机译:ZnO纳米棒和Ti缓冲层的结构和电性能
机译:Ti-缓冲层上ZnO纳米棒的合成及微观结构性能
机译:具有ZnO缓冲层的Si上Pb 1.1 SUB>(Zr 0.20 SUB> Ti 0.80 SUB>)O 3 SUB>的结构和电学性质用于铁电FET应用
机译:ZnO种子层对GaN缓冲层生长ZnO纳米棒形态和光学性质的影响
机译:半透明氧化锌:低温制备的铝/铜(I)氧化物薄膜异质结:结处本征ZnO缓冲层的作用
机译:原子层沉积制备的掺钛ZnO薄膜的结构电学和光学性质
机译:SrTiO3缓冲层对化学法制备Bi3.15Nd0.85Ti3O12薄膜结构和电学性能的影响