Nonvolatile nano-floating gate memory devices based on pentacene semiconductors and organic tunneling insulator layers

摘要

Controlled gold nanoparticle (Au_(NP))-based nonvolatile memory devices were developed based on pentacene organic transistors and polymethylmethacrylate (PMMA) insulator layers. The memory device had the following configuration: n + Si gate/SiO_2 blocking oxide/polyelectrolytes/Au_(NP)/PMMA tunneling dielectric layer/Au source-drain. According to the programming/erasing operations, the memory device showed good programmable memory characteristics with a large memory window. In addition, good reliability was confirmed by the data retention characteristics. The fabrication procedures for the charge trapping and tunneling layers were based on simple solution processes (by dipping and spin-coating) and the maximum processing temperature was <100 ℃, so this method has potential applications in plastic/flexible electronics.