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Strong blue light emission from a-SiN_x:O films via localized surface plasmon enhancement

机译:通过局部表面等离子体激元增强从a-SiN_x:O薄膜发出强烈的蓝光

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摘要

Strong and stable blue photoluminescence (PL) at room temperature has been observed from amorphous oxidized silicon nitride (a-SiN_x:O) films with Ag nanoparticles inserted between a-SiN_x:O films and Si substrates. The resonant excitation of localized surface plasmons (LSPs) with the emission of a-SiN_x:O films has resulted in an increase in the internal quantum efficiency, from 3.9% to 8.4%. We have found that the PL efficiency ratio induced by resonant coupling is close to the enhancement of the spontaneous emission rate of a-SiN_x:O, which demonstrates that a-SiN_x:O films with LSP-enhanced blue emission is promising for silicon-based light-emitting applications.
机译:从非晶氧化的氮化硅(a-SiN_x:O)薄膜中观察到强且稳定的蓝色光致发光(PL),其中Ag纳米颗粒插入a-SiN_x:O薄膜和Si衬底之间。随着a-SiN_x:O薄膜的发射,局部表面等离子体激元(LSP)的共振激发导致内部量子效率从3.9%提高到8.4%。我们已经发现,共振耦合引起的PL效率比接近a-SiN_x:O的自发发射速率的提高,这表明具有LSP增强蓝色发射的a-SiN_x:O膜有望用于硅基发光应用。

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  • 来源
    《Applied Physics Letters》 |2012年第1期|p.013106.1-013106.4|共4页
  • 作者单位

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

    National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering,Nanjing University, Nanjing 210093, People's Republic of China;

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