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首页> 外文期刊>Applied Physics Letters >Intrinsic ultrathin topological insulators grown via molecular beam epitaxy characterized by in-situ angle resolved photoemission spectroscopy
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Intrinsic ultrathin topological insulators grown via molecular beam epitaxy characterized by in-situ angle resolved photoemission spectroscopy

机译：通过分子束外延生长的本征超薄拓扑绝缘体，其特征在于原位角分辨光发射光谱

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摘要

We demonstrate the capability of growing high quality ultrathin (10 or fewer quintuple layers) films of the topological insulators Bi_2Se_3 and Bi_2Te_3 using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band for ultrathin samples, our samples remain intrinsic bulk insulators. We characterize these films using in-situ angle resolved photoemission spectroscopy, which is a direct probe of bandstructure, and ex-situ atomic force microscopy. We find that the conduction band lies above the Fermi energy, indicating bulk insulating behavior with only the surface states crossing the Fermi energy. The use of a thermal cracker allows for more stoichiometric flux rates during growth, while still creating intrinsically doped films, paving the way for future improvements in growth of topological insulators.
机译：我们展示了使用分子束外延生长高质量的拓扑绝缘体Bi_2Se_3和Bi_2Te_3的超薄（五层或更少的五层）薄膜的能力。不同于以前的生长技术（通常将费米能量固定在超薄样品的导带中），我们的样品仍然是本征绝缘体。我们使用原位角分辨光发射光谱法（对能带结构和原位原子力显微镜的直接探针）表征这些薄膜。我们发现导带位于费米能量之上，表明体绝缘行为只有表面状态穿过费米能量。使用热裂化器可在生长过程中获得更多的化学计量通量，同时仍会形成本征掺杂的薄膜，为将来改善拓扑绝缘子的生长铺平了道路。

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  • 来源
    《Applied Physics Letters》 |2012年第1期|p.013118.1-013118.5|共5页
  • 作者

    J. J. Lee; F. T. Schmitt; R. G. Moore; I. M. Vishlk; Y. Ma; Z. X. Shen;

  • 作者单位

    Department of Applied Physics, Stanford University, Stanford, California 94305, USA,Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford,California 94305, USA;

    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford,California 94305, USA;

    Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford,California 94305, USA;

    Department of Applied Physics, Stanford University, Stanford, California 94305, USA,Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford,California 94305, USA;

    Department of Applied Physics, Stanford University, Stanford, California 94305, USA,Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford,California 94305, USA;

    Department of Applied Physics, Stanford University, Stanford, California 94305, USA,Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA,Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford,California 94305, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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