Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices

摘要

We report on the observation of electron resonant tunneling phenomenon through multi-stepped potential barriers of metal-insulator-insulator-insulator-metal (MIIIM) diodes. Through selection of oxide materials and atomically multilayering the potential barrier profile design, MIIIM devices consisting of Cr/Cr_2O_3-HfO_2-Al_2O_3/Cr, and Cr/Cr_2O_3-HfO_2-Al_2O_3/Cr, were fabricated and characterized. Due to electron resonat tunnling, via multiple quantum wells formation at the oxides interfaces, we show that such electron tunneling diodes exhibit extreme asymmetry and high non-linearity. These findings are significant in the development of future electron tunneling devices in many disciplines for either high or low voltage operations.