机译:光学研究AIGaN / GaN高电子迁移率晶体管中的降解机理:非辐射复合中心的产生
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom;
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom;
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA;
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA;
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology,77 Massachusetts Avenue, Rm. 39-567B, Cambridge, Massachusetts 02139, USA;
Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology,77 Massachusetts Avenue, Rm. 39-567B, Cambridge, Massachusetts 02139, USA;
Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara,California 93106, USA;
Materials Department, University of California Santa Barbara, Santa Barbara, California 93106, USA;
Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom;
H. H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom;
机译:光学研究AlGaN / GaN高电子迁移率晶体管中的降解机理:非辐射复合中心的产生
机译:电致发光,电场诱导的光学二次谐波产生和光致发光成像对AIGaN / GaN高电子迁移率晶体管的降解分析
机译:通过电场感应光二次谐波产生直接观察p-GaN栅极AIGaN / GaN高电子迁移率晶体管的场板下的俘获电荷
机译:断态应力期间AIGaN / GaN高电子迁移率晶体管的电场驱动降解
机译:隧道场效应晶体管的解析模型和GaN高电子迁移率晶体管的实验研究。
机译:使用不同缓冲层配置的200mm硅(111)衬底上的AlGaN / GaN高电子迁移率晶体管结构研究
机译:光学研究AlGaN / GaN高电子迁移率晶体管中的降解机理:非辐射复合中心的产生