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Electronic structures of an epitaxial graphene monolayer on SiC(0001) after metal intercalation (metal = Al, Ag, Au, Pt, and Pd): A first-principles study

机译:金属插层(金属= Al,Ag,Au,Pt和Pd)后SiC(0001)上外延石墨烯单层的电子结构:第一性原理研究

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摘要

The atomic structures and electronic properties of metal-intercalated (metal = AI, Ag, Au, Pt, and Pd) graphene monolayers on SiC(0001) were investigated using first-principles calculations. The unique Dirac cone of graphene near the K point reappeared as the graphite layer was intercalated by these metals at a coverage of 3/8 ML. Furthermore, our results show that metal intercalation leads to n-type doping of graphene. The bands contributed from graphene exhibit small splitting after intercalation, whereas the bands contributed from the intercalated metal layer have significant Rashba spin-orbit splittings in all cases except Al.
机译:使用第一性原理计算研究了在SiC(0001)上金属插层(金属= AI,Ag,Au,Pt和Pd)石墨烯单层的原子结构和电子性能。当石墨层被这些金属以3/8 ML的覆盖率插入时,在K点附近出现了唯一的石墨烯狄拉克锥。此外,我们的结果表明金属插层导致石墨烯的n型掺杂。石墨烯贡献的带在插层后表现出很小的分裂,而嵌入金属层的带在除Al以外的所有情况下均具有显着的Rashba自旋轨道分裂。

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  • 来源
    《Applied Physics Letters》 |2012年第6期|p.063115.1-063115.4|共4页
  • 作者单位

    Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan;

    Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles,California 90095-1595, USA;

    Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan Department of Materials Science and Engineering, University of California, Los Angeles, Los Angeles,California 90095-1595, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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