Addendum: 'A study of capacitance-voltage curve narrowing effect in capacitive microelectromechanical switches' [Appl. Phys. Lett. 93, 094101 (2008)]

摘要

In Ref. 1, we reported on the capacitance-voltage (C-V) curve narrowing effect in the oxide-based microelectromechanical switches, which were subjected to dc bias stress. We showed the narrowing effect for the non-contact stress condition, which proved that the membrane to dielectric contact is not required for the narrowing to occur. This has ruled out the impact of charge trapping due to current conduction in the dielectric and air-ionization in the air-gap as the physical origins of the narrowing effect due to non-contact stress. Moreover, we stated that also the mechanical degradation of the moving electrode cannot be responsible for the narrowing effect in our switches during both the noncontact and contact stresses. In presence of the experimental data in this work, we have a different viewpoint regarding of the mechanism responsible for the narrowing effect.