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Band offsets in HfO_2/InGaZnO_4 heterojunctions

机译：HfO_2 / InGaZnO_4异质结中的能带偏移

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摘要

The valence band discontinuity (△E_v) of sputter deposited HfO_2/InZnGaO_4 (IGZO) heterostructures was obtained from x-ray photoelectron spectroscopy measurements. The HfO_2 exhibited a bandgap of 6.07 eV from absorption measurements. A value of △E_v = 0.48 ± 0.025 eV was obtained by using the Ga 2_(p3/2), Zn 2p_(3/2_, and In 3d_(5/2_ energy levels as references. This implies a conduction band offset △E_v of 2.39 eV in HfO_2/InGaZnO_4 heterostructures and a nested interface band alignment.
机译：溅射沉积的HfO_2 / InZnGaO_4（IGZO）异质结构的价带不连续性（△E_v）通过X射线光电子能谱测量获得。根据吸收测量结果，HfO_2的带隙为6.07 eV。以Ga 2_（p3 / 2），Zn 2p_（3 / 2_和In 3d_（5 / 2_）的能级为参考，得出△E_v = 0.48±0.025 eV。 HfO_2 / InGaZnO_4异质结构中的2.39 eV的变化和嵌套界面能带排列。

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  • 来源
    《Applied Physics Letters》 |2012年第1期|p.012105.1-012105.3|共3页
  • 作者

    Hyun Cho; E. A. Douglas; B. P. Gila; V. Craciun; E. S. Lambers; Fan Ren; S. J. Pearton;

  • 作者单位

    Department of Nanomechatronics Engineering, Pusan National University, Gyeongnam 627-706, Korea;

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

    Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA;

    Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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