机译:通过分子束外延成核直径小于35 nm的单个GaN纳米棒
Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan,Department of Physics, Chemistry and Biology (1FM), Linkoping University, S-58183 Linkoping, Sweden;
Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga, Japan;
Department of Physics, Chemistry and Biology (1FM), Linkoping University, S-58183 Linkoping, Sweden;
Department of Physics, Chemistry and Biology (1FM), Linkoping University, S-58183 Linkoping, Sweden;
Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan;
Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan,Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan;
Department of Physics, Chemistry and Biology (1FM), Linkoping University, S-58183 Linkoping, Sweden;
Department of Physics, Chemistry and Biology (1FM), Linkoping University, S-58183 Linkoping, Sweden;
Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga, Japan;
机译:通过分子束外延成核直径小于35 nm的单个GaN纳米棒
机译:等离子体辅助分子束外延在Si(111)表面上成核和生长GaN纳米棒-Si和Mg掺杂的影响
机译:通过改变分子束外延过程中的生长温度来控制GaN纳米棒的直径
机译:使用低温GaN和A1n成核层对晶格匹配ZrB_2基材的GaN的分子束外延
机译:等离子体动力学对氮化镓纳米棒和分子束外延生长的影响。
机译:等离子体辅助分子束外延通过液滴外延对Si(111)上的GaN纳米点进行表征和密度控制
机译:通过分子束外延成核直径小于35 nm的单个GaN纳米棒