Electric-field induced transition of resistive switching behaviors in BaTiO_3/Co:BaTiO_3/BaTiO_3 trilayers

摘要

Electric-field induced transition of resistive switching behaviors has been demonstrated in BaTiO_3/Co:BaTiO_3/BaTiO_3 trilayers. At low applied bias, the Au/BaTiO_3/Co:BaTiO_3/BaTiO_3/Pt device shows bipolar resistive switching (BRS) behavior, whereas it converts to complementary resistive switching (CRS) at high applied bias due to the depletion of oxygen vacancies in BaTiO_3 layer. The Schottky-like emission accompanied by trapping/detrapping process at the interfaces is likely responsible for the BRS and CRS effects in the trilayers. Furthermore, the operating current of the CRS devices can be reduced significantly by decreasing the doped layer.