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机译:通过Al组成渐变的AlGaN / GaN超晶格电子阻挡层提高了基于GaInN的发光二极管的整体效率,并降低了效率下降
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA;
Seoul Opto-device Co., 725-5 Wonsi-dong, Danwon-gu, Ansan City, Kyunggi-do 425-851, South Korea;
Seoul Opto-device Co., 725-5 Wonsi-dong, Danwon-gu, Ansan City, Kyunggi-do 425-851, South Korea;
School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, South Korea;
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, South Korea;
机译:通过Al组成渐变的AlGaN / GaN超晶格电子阻挡层提高了基于GaInN的发光二极管的整体效率,并降低了效率下降
机译:具有高镁掺杂效率的专门设计的超晶格p型电子阻挡层的几乎无下垂的AlGaN基紫外发光二极管
机译:带有AlGaN-GaN-AlGaN电子阻挡层的蓝色InGaN / GaN发光二极管的效率增强
机译:通过设计电子阻挡层减少GaN / IngaN多量子孔发光二极管的Si-掺杂屏障模型的效率下垂
机译:在生物有机发光二极管中使用DNA电子阻挡层提高了发光效率和亮度。
机译:具有高镁掺杂效率的特别设计的超晶格p型电子阻挡层的几乎无效率下降的基于AlGaN的紫外线发光二极管
机译:具有AlGaN / GaN / AlGaN量子阱结构的电子阻挡层的蓝色InGaN / GaN发光二极管的优势
机译:利用脱氧核糖酸复合物作为电子阻挡层提高有机发光二极管的发光效率。