Influence of Pb doping on the electrical transport properties of BiCuSeO

摘要

The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi_(1-x)Pb_xCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi_(1-x)Pb_xCuSeO (x = 0.03) reaches 5.3μW cm~(-1) K~(-2) at 873 K. The influence of Pb~(2+) doping on the electronic structure is the same as the one obtained with Sr~(2+), however, the decrease of the holes mobility is reduced as compared to Sr~(2+) doping, which could be beneficial to the thermoelectric performances.