机译:通过卷对卷化学气相沉积和转移工艺生产100米长的高质量石墨烯透明导电膜
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
Advanced Materials Laboratories, Sony Corporation, Atsugi-Shi, Kanagawa 243-0014, Japan;
机译:卷对卷微波等离子体化学气相沉积工艺,用于在低温下生产294 mm宽的石墨烯薄膜
机译:通过大气压化学气相沉积法生长的高质量,导电且透明的掺杂Ga的ZnO薄膜
机译:透明导电膜的多层石墨烯的化学气相沉积生长
机译:化学气相沉积制备的透明导电ZnO薄膜的结构和光电研究
机译:通过化学气相沉积法在透明基板上低温直接生长石墨烯薄膜。
机译:吡啶化学气相沉积制得的氮掺杂石墨烯薄膜:工艺参数对电学和光学性质的影响
机译:通过掺杂薄透明导电膜的化学气相沉积电子性能研究生长单层石墨烯