机译:InGaN / GaN量子阱结构的高激发载流子密度复合动力学:可能与效率下降有关
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester M13 9PL, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester M13 9PL, United Kingdom;
School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester,Manchester M13 9PL, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street,Cambridge CB2 3QZ, United Kingdom;
机译:高注入的载流子密度对InGaN / GaN量子阱结构中载流子局部化和效率下降的影响
机译:高注入的载流子密度对InGaN / GaN量子阱结构中载流子局部化和效率下降的影响
机译:InGaN / GaN量子阱结构中载流子密度相关的局部化和效率下降的后果
机译:使用AlGaN / GaN超晶格结构减少InGaN / GaN多量子阱发光二极管的效率下降
机译:研究和优化GaN基发光二极管中的载流子传输,载流子分布和效率下降
机译:InGaN / GaN量子阱结构中的表面等离子体激元耦合动力学和辐射效率的提高
机译:InGaN / GaN量子井结构的高励磁载体密度重组动力学:可能与效率下垂相关